Polysilicon-emitter bipolar transistors with interfacial nitride

Polysilicon-emitter bipolar transistors with interfacial nitride

Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Nouri, F., Scharf, B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic measurements
Bipolar transistors
Electron emission
Equations
Implants
Rapid thermal processing
Reproducibility of results
Silicon
Thermal resistance
Tunneling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Polysilicon emitter transistors with interfacial nitride and low emitter resistance have been fabricated reproducibly. The use of a phosphorus emitter has reduced the emitter resistance to a level comparable to that of barrier-free poly emitters. It is shown that the enhanced gain due to the interfacial barrier can be traded off for a reduction in base resistance. The authors have investigated the thermal stability, electrical reliability and noise characteristics of the transistors.< >
DOI:10.1109/BIPOL.1992.274077