A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs

A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs

The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performanc...

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Hauptverfasser: Iinuma, T., Itoh, N., Inou, K., Nakajima, H., Matsuda, S., Kunishima, I., Suguro, K., Katsumata, Y., Iwai, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Boron
Contact resistance
Electrical resistance measurement
Electrodes
Large scale integration
Silicidation
Silicides
Silicon
Temperature
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Zusammenfassung:The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4- mu m NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi/sub 2//polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Omega was obtained.< >
DOI:10.1109/BIPOL.1992.274076