New submicron non-volatile memory modules for 16/32-bit devices

New submicron non-volatile memory modules for 16/32-bit devices

Development of new submicron non-volatile memory modules, including an EEPROM with unique programmable redundancy and a block erasable flash EEPROM, for 16-bit and 32-bit devices is reported. Optional process modules required for the non-volatile memories are developed for integration into the basel...

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Bibliographische Detailangaben
Hauptverfasser: Kuo, C., Morton, B., Toms, T., Weidner, M., Chrudimsky, D., Choe, H., Bowers, M., Yeon-seuk Kim, Chang, K.M., Smith, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS logic circuits
CMOS process
CMOS technology
EPROM
Error correction codes
Logic devices
Microcontrollers
Nonvolatile memory
Redundancy
Research and development
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Beschreibung
Zusammenfassung:Development of new submicron non-volatile memory modules, including an EEPROM with unique programmable redundancy and a block erasable flash EEPROM, for 16-bit and 32-bit devices is reported. Optional process modules required for the non-volatile memories are developed for integration into the baseline logic process based on 0.65 mu double metal CMOS technology.< >
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.1993.263677