Megawatt MOS controlled thyristor for high voltage power circuits

Megawatt MOS controlled thyristor for high voltage power circuits

The authors describes first-generation PMOS-controlled thyristors (P-MCTs) that are fairly mature at 600-1200 V and their first successful 3 kV devices. Single devices are shown operating, in surge, at multimegawatt levels. Modules of parallel or series devices have turned off near megawatt loads. T...

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Bibliographische Detailangaben
Hauptverfasser: Temple, V.A.K., Arthur, S.D., Watrous, D.L., DeDoncker, R.W., Mehta, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
FETs
MOSFETs
Physics
Power system reliability
Rivers
Surges
Temperature
Thyristors
Voltage control
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Zusammenfassung:The authors describes first-generation PMOS-controlled thyristors (P-MCTs) that are fairly mature at 600-1200 V and their first successful 3 kV devices. Single devices are shown operating, in surge, at multimegawatt levels. Modules of parallel or series devices have turned off near megawatt loads. The 3 kV MCT is shown operating in an experimental resonant-type circuit aimed at applications in high-power motor drives.< >
DOI:10.1109/PESC.1992.254772