Design and performance of UHF and L-band oscillators using thin-film resonators on semiconductor substrates

Design and performance of UHF and L-band oscillators using thin-film resonators on semiconductor substrates

The authors report on the use of sputter-deposited, thin-film, aluminum nitride resonators as the feedback element in hybrid single-mode, combline, and voltage-controlled UHF and L-band oscillators. The resonators have also been cointegrated on the same substrate with 2-GHz BJTs (bipolar junction tr...

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Bibliographische Detailangaben
Hauptverfasser: Burns, S.G., Weber, R.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Filters
Frequency control
L-band
Piezoelectric films
Semiconductor thin films
Sputtering
State feedback
Substrates
Voltage-controlled oscillators
Zinc oxide
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Zusammenfassung:The authors report on the use of sputter-deposited, thin-film, aluminum nitride resonators as the feedback element in hybrid single-mode, combline, and voltage-controlled UHF and L-band oscillators. The resonators have also been cointegrated on the same substrate with 2-GHz BJTs (bipolar junction transistors). Design techniques and suggestions for novel architectures using this technology are presented.< >
DOI:10.1109/MWSCAS.1991.252038