A simple method for extraction of multiple quantum well absorption coefficient from reflectance and transmittance measurements

A simple model is presented which takes into account interference effects in the common three-layer p-i-n diode epitaxial structure used for measurement of electroabsorption effects in multiple quantum well material. Antireflection coatings or surface roughening are not required to extinguish Fabry-...

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Veröffentlicht in:	IEEE journal of quantum electronics 1993-10, Vol.29 (10), p.2589-2595
Hauptverfasser:	Gerber, D.S., Maracas, G.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Coatings Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Fabry-Perot Gallium arsenide Iii-v semiconductors Interference Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films P-i-n diodes Physics Reflectivity Rough surfaces Semiconductor process modeling Surface roughness
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Beschreibung
Zusammenfassung:	A simple model is presented which takes into account interference effects in the common three-layer p-i-n diode epitaxial structure used for measurement of electroabsorption effects in multiple quantum well material. Antireflection coatings or surface roughening are not required to extinguish Fabry-Perot oscillations in the reflectance and transmittance spectra which improves the accuracy of the extracted absorption coefficient. Sources of error in the extracted absorption coefficient are examined. The absorption spectra of bulk GaAs and a 10-nm GaAs/10-nm AlGaAs multiple quantum well obtained using this method are compared with other measured results.< >
ISSN:	0018-9197 1558-1713
DOI:	10.1109/3.250380