High efficiency X-band power HBTs

High efficiency X-band power HBTs

High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output power of 769 mW (power density of 6.4 W/mm), and a g...

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Bibliographische Detailangaben
Hauptverfasser: Wu, C.S., Pao, C.K., Hu, M., Igawa, A.T., Wang, D.C., Wen, C.P., Cisco, T.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aircraft
Etching
Fingers
Gallium arsenide
Heterojunction bipolar transistors
Inductance
Phased arrays
Power generation
Substrates
Topology
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Zusammenfassung:High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output power of 769 mW (power density of 6.4 W/mm), and a gain of 7.9 dB at 9 GHz. As compared to the published state-of-the-art results, this device showed better power efficiency and density at the same output power level. This high performance is attributed to process enhancement and a novel device topology.< >
DOI:10.1109/GAAS.1992.247270