Modelling a GTO with PSPICE

The structure of a PSPICE gate turn-off thyristor (GTO) model is described. A main principle is to calculate the model parameters without the requirement of physical device data like doping profile and device dimensions. All parameters are derived from the GTO data sheet and from measurements of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Apeldoorn, O., Schulting, L., Skudelny, H.-C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Capacitance Circuit simulation Circuit testing Power electronics Semiconductor process modeling SPICE Tail Thyristors Voltage
Online-Zugang:	Volltext bestellen
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