Modelling a GTO with PSPICE

Modelling a GTO with PSPICE

The structure of a PSPICE gate turn-off thyristor (GTO) model is described. A main principle is to calculate the model parameters without the requirement of physical device data like doping profile and device dimensions. All parameters are derived from the GTO data sheet and from measurements of the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Apeldoorn, O., Schulting, L., Skudelny, H.-C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Capacitance
Circuit simulation
Circuit testing
Power electronics
Semiconductor process modeling
SPICE
Tail
Thyristors
Voltage
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Beschreibung
Zusammenfassung:The structure of a PSPICE gate turn-off thyristor (GTO) model is described. A main principle is to calculate the model parameters without the requirement of physical device data like doping profile and device dimensions. All parameters are derived from the GTO data sheet and from measurements of the dynamic behavior. In order to reduce the number of nodes and the required simulation time, the available PSPICE transistor model is used. A network for a static model consisting of two transistors and four resistors was investigated. A model of a 1600-V/600-A GTO is presented. Comparison between the simulated and measured waveforms confirms the quality of the model.< >
DOI:10.1109/IAS.1992.244428