Gas source molecular beam epitaxial growth and characterization of InP on GaAs

Gas source molecular beam epitaxial growth and characterization of InP on GaAs

Heteroepitaxial growth of thick (up to 5 mu m) InP on GaAs by gas-source molecular beam epitaxy is investigated using in-situ reflection high-energy electron diffraction and low-temperature photoluminescence experiments. The initial stages of growth are characterized by a Stranski-Krastanov growth m...

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Bibliographische Detailangaben
Hauptverfasser: Droopad, R., Choi, K.Y., Shiralagi, K.T., Puechner, R.A., Maracas, G.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Epitaxial layers
Gallium arsenide
III-V semiconductor materials
Indium phosphide
Molecular beam epitaxial growth
Optical reflection
Photoluminescence
Stimulated emission
Substrates
Temperature
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Zusammenfassung:Heteroepitaxial growth of thick (up to 5 mu m) InP on GaAs by gas-source molecular beam epitaxy is investigated using in-situ reflection high-energy electron diffraction and low-temperature photoluminescence experiments. The initial stages of growth are characterized by a Stranski-Krastanov growth mode. Above the critical thickness for dislocation formation, 3-D islands are formed having sloping sides oriented along the
DOI:10.1109/ICIPRM.1992.235720