Cryogenic noise performance of InGaAs/InAlAs/InP HEMTs

Cryogenic noise performance of InGaAs/InAlAs/InP HEMTs

The authors describe the measured cryogenic noise performance of a 0.1- mu m T-gate InP HEMT (high electron mobility transistor) operating at 30 K and a two-stage HEMT low-noise amplifier operating at 19 K. The InP HEMT achieved a noise temperature of 5-15 K when operated at 30 K and at 12-18 GHz, w...

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Hauptverfasser: Lain, R., Allen, B.A., Yang, C.C., Shaw, L., Brunone, D., Tan, K.L., Streit, D.C., Liu, P.H., Bautista, J.J., Ortiz, G.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cryogenics
HEMTs
Indium compounds
Indium gallium arsenide
Indium phosphide
Low-noise amplifiers
MODFETs
Noise measurement
Operational amplifiers
Temperature
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Zusammenfassung:The authors describe the measured cryogenic noise performance of a 0.1- mu m T-gate InP HEMT (high electron mobility transistor) operating at 30 K and a two-stage HEMT low-noise amplifier operating at 19 K. The InP HEMT achieved a noise temperature of 5-15 K when operated at 30 K and at 12-18 GHz, while the noise temperature of the two-stage amplifier decreased from 160 K to 40 K with cryogenic operation at 30-34 GHz.< >
DOI:10.1109/ICIPRM.1992.235640