High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers

The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewidth enhancement factor measured above threshold. T...

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Hauptverfasser: Blez, M., Kazmierski, C., Mathoorasing, D., Quillec, M., Gilleron, M., Nakajima, H., Sermage, B.
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creator Blez, M.
Kazmierski, C.
Mathoorasing, D.
Quillec, M.
Gilleron, M.
Nakajima, H.
Sermage, B.
description The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewidth enhancement factor measured above threshold. They present an improved set of characteristics on 6-well InGaAs/InGaAlAs DFB BRS lasers, suitable for 10-Gb/s operation. An open eye diagram observed under 10-Gb/s strong signal modulation confirms the potential interest of the aluminium system for low chirp lasers modulated at high bit rates.< >
doi_str_mv 10.1109/ICIPRM.1992.235611
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identifier ISBN: 0780305221
ispartof LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992, p.618-621
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Chirp
High speed optical techniques
Holographic optical components
Holography
Indium gallium arsenide
Power generation
Power lasers
Quantum well devices
Quantum well lasers
Threshold current
title High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers
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