High speed narrow linewidth 1.55 mu m GaInAs/AlGaInAs MQW DFB lasers

The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewidth enhancement factor measured above threshold. T...

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Bibliographische Detailangaben
Hauptverfasser:	Blez, M., Kazmierski, C., Mathoorasing, D., Quillec, M., Gilleron, M., Nakajima, H., Sermage, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chirp High speed optical techniques Holographic optical components Holography Indium gallium arsenide Power generation Power lasers Quantum well devices Quantum well lasers Threshold current
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Zusammenfassung:	The authors report the successful realization of InGaAs/InGaAlAs MQW (multiquantum well) active layer DFB (distributed feedback) BRS (buried ridge structure) lasers with good static, dynamic, and spectral performances, together with a very low linewidth enhancement factor measured above threshold. They present an improved set of characteristics on 6-well InGaAs/InGaAlAs DFB BRS lasers, suitable for 10-Gb/s operation. An open eye diagram observed under 10-Gb/s strong signal modulation confirms the potential interest of the aluminium system for low chirp lasers modulated at high bit rates.< >
DOI:	10.1109/ICIPRM.1992.235611