A NiSi salicide technology for advanced logic devices

A NiSi salicide technology for advanced logic devices

A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi laye...

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Hauptverfasser: Morimoto, T., Momose, H.S., Iinuma, T., Kunishima, I., Suguro, K., Okana, H., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic layer deposition
Boron
CMOS technology
Contact resistance
Logic devices
MOSFET circuits
Silicidation
Silicides
Silicon
Temperature
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Beschreibung
Zusammenfassung:A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1991.235387