A physical lifetime prediction method for hot-carrier-stressed p-MOS transistors

A recently developed model for the degradation of Si p-MOS transistors by hot-carrier injection is extended to take into account the detrapping of trapped electrons. Based on their approach, a more reliable and practicable lifetime prediction method for p-MOS transistors is established. A novel expression for the lifetime is derived which is valid in a wider range than the empirical power-law dependence of lifetime on gate current.< >