A novel high-performance lateral bipolar on SOI

A novel high-performance lateral bipolar on SOI

A novel lateral bipolar structure on SOI (silicon-on-insulator) is described. This device has a thin double-diffused base and a narrow emitter width, determined by the SOI thickness. It has minimal parasitic junction capacitance, as well as minimal emitter and collector resistances. Excellent device...

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Hauptverfasser: Shahidi, G.G., Tang, D.D., Davari, B., Taur, Y., McFarland, P., Jenkins, K., Danner, D., Rodriguez, M., Megdanis, A., Petrillo, E., Polcari, M., Ning, T.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Contact resistance
Delay effects
Doping
Electric breakdown
Fabrication
Implants
MOSFETs
Parasitic capacitance
Silicon on insulator technology
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Beschreibung
Zusammenfassung:A novel lateral bipolar structure on SOI (silicon-on-insulator) is described. This device has a thin double-diffused base and a narrow emitter width, determined by the SOI thickness. It has minimal parasitic junction capacitance, as well as minimal emitter and collector resistances. Excellent device characteristics and an f/sub T/ of about 20 GHz were demonstrated.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1991.235335