An accurate model of thin film SOI-MOSFET breakdown voltage

A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently ampl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chen, J., Assaderaghi, F., Wann, H.-J., Ko, P., Hu, C., Cheng, P., Solomon, R., Chan, T.-Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Breakdown voltage Current measurement Electric breakdown Electrons Impact ionization MOSFET circuits Semiconductor films Silicon on insulator technology Transistors
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