An accurate model of thin film SOI-MOSFET breakdown voltage

An accurate model of thin film SOI-MOSFET breakdown voltage

A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently ampl...

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Bibliographische Detailangaben
Hauptverfasser: Chen, J., Assaderaghi, F., Wann, H.-J., Ko, P., Hu, C., Cheng, P., Solomon, R., Chan, T.-Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Breakdown voltage
Current measurement
Electric breakdown
Electrons
Impact ionization
MOSFET circuits
Semiconductor films
Silicon on insulator technology
Transistors
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Beschreibung
Zusammenfassung:A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1991.235333