An accurate model of thin film SOI-MOSFET breakdown voltage
A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently ampl...
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| creator | Chen, J. Assaderaghi, F. Wann, H.-J. Ko, P. Hu, C. Cheng, P. Solomon, R. Chan, T.-Y. |
| description | A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.< > |
| doi_str_mv | 10.1109/IEDM.1991.235333 |
| format | Conference Proceeding |
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The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.< ></description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780302435</identifier><identifier>ISBN: 9780780302433</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1991.235333</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Breakdown voltage ; Current measurement ; Electric breakdown ; Electrons ; Impact ionization ; MOSFET circuits ; Semiconductor films ; Silicon on insulator technology ; Transistors</subject><ispartof>International Electron Devices Meeting 1991 [Technical Digest], 1991, p.671-674</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/235333$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/235333$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Assaderaghi, F.</creatorcontrib><creatorcontrib>Wann, H.-J.</creatorcontrib><creatorcontrib>Ko, P.</creatorcontrib><creatorcontrib>Hu, C.</creatorcontrib><creatorcontrib>Cheng, P.</creatorcontrib><creatorcontrib>Solomon, R.</creatorcontrib><creatorcontrib>Chan, T.-Y.</creatorcontrib><title>An accurate model of thin film SOI-MOSFET breakdown voltage</title><title>International Electron Devices Meeting 1991 [Technical Digest]</title><addtitle>IEDM</addtitle><description>A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.< ></description><subject>Analytical models</subject><subject>Breakdown voltage</subject><subject>Current measurement</subject><subject>Electric breakdown</subject><subject>Electrons</subject><subject>Impact ionization</subject><subject>MOSFET circuits</subject><subject>Semiconductor films</subject><subject>Silicon on insulator technology</subject><subject>Transistors</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780302435</isbn><isbn>9780780302433</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjztPwzAUhS0eEmlhR0z-A05t3yS2xVSVQiO1ylAGtsqxryGQB0oCFf-eoDKd5Ty-Q8it4LEQ3Czy9cMuFsaIWEIKAGckkiLNGBfq5ZzMuNIcuEwgvSARFxkwYYS-IrNheOdcqtSkEblfttQ699XbEWnTeaxpF-j4VrU0VHVD90XOdsX-cf1Myx7th--OLf3u6tG-4jW5DLYe8OZf5-TPt9qwbfGUr5ZbVmkzMj0to8ZyEqkQVBkcgPTWmsQECc5NjADeaR6yTHpXJt5PGemU9xMmzMndqbVCxMNnXzW2_zmcHsMvoXxGnQ</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Chen, J.</creator><creator>Assaderaghi, F.</creator><creator>Wann, H.-J.</creator><creator>Ko, P.</creator><creator>Hu, C.</creator><creator>Cheng, P.</creator><creator>Solomon, R.</creator><creator>Chan, T.-Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>An accurate model of thin film SOI-MOSFET breakdown voltage</title><author>Chen, J. ; Assaderaghi, F. ; Wann, H.-J. ; Ko, P. ; Hu, C. ; Cheng, P. ; Solomon, R. ; Chan, T.-Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-8163e8eb16327e37bfc332daa949f23cc30233dc80f662dcb4dd8162c7dd0023</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Analytical models</topic><topic>Breakdown voltage</topic><topic>Current measurement</topic><topic>Electric breakdown</topic><topic>Electrons</topic><topic>Impact ionization</topic><topic>MOSFET circuits</topic><topic>Semiconductor films</topic><topic>Silicon on insulator technology</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Assaderaghi, F.</creatorcontrib><creatorcontrib>Wann, H.-J.</creatorcontrib><creatorcontrib>Ko, P.</creatorcontrib><creatorcontrib>Hu, C.</creatorcontrib><creatorcontrib>Cheng, P.</creatorcontrib><creatorcontrib>Solomon, R.</creatorcontrib><creatorcontrib>Chan, T.-Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, J.</au><au>Assaderaghi, F.</au><au>Wann, H.-J.</au><au>Ko, P.</au><au>Hu, C.</au><au>Cheng, P.</au><au>Solomon, R.</au><au>Chan, T.-Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An accurate model of thin film SOI-MOSFET breakdown voltage</atitle><btitle>International Electron Devices Meeting 1991 [Technical Digest]</btitle><stitle>IEDM</stitle><date>1991</date><risdate>1991</risdate><spage>671</spage><epage>674</epage><pages>671-674</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780302435</isbn><isbn>9780780302433</isbn><abstract>A quantitative model which relates the SOI (silicon-on-insulator) MOSFET breakdown voltage to key parameters such as channel length, SOI film thickness, and gate voltage is presented. The SOI breakdown is caused by electron impact ionization current produced near the drain which is subsequently amplified by a parasitic lateral bipolar transition. This model is based on analytic modeling, quasi-2-D simulation and experimental study of the maximum drain electric field in SOI, and a novel method for measuring the lateral BJT (bipolar junction transistor) current gain beta using GIDL (gate-induced drain leakage) current. It can accurately model the breakdown voltage within 0.2 V for different channel lengths, gate voltages, and SOI film thicknesses.< ></abstract><pub>IEEE</pub><doi>10.1109/IEDM.1991.235333</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | International Electron Devices Meeting 1991 [Technical Digest], 1991, p.671-674 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_235333 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analytical models Breakdown voltage Current measurement Electric breakdown Electrons Impact ionization MOSFET circuits Semiconductor films Silicon on insulator technology Transistors |
| title | An accurate model of thin film SOI-MOSFET breakdown voltage |
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