MICROX-an advanced silicon technology for microwave circuits up to X-band

MICROX-an advanced silicon technology for microwave circuits up to X-band

An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids currently used in systems up to X-band. The technology i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Agarwal, A.K., Driver, M.C., Hanes, M.H., Hobgood, H.M., McMullin, P.G., Nathanson, H.C., O'Keeffe, T.W., Smith, T.J., Szedon, J.R., Thomas, R.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS digital integrated circuits
CMOS integrated circuits
CMOS technology
Hybrid integrated circuits
Integrated circuit reliability
Integrated circuit technology
Microwave circuits
Microwave technology
MMICs
Silicon
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids currently used in systems up to X-band. The technology involves high-resistivity substrates. SIMOX (separation by implanted oxygen) processing, metal reinforced wide (100- mu m) by very short (0.3-0.5- mu m) polysilicon gates with multiple fingers, air-bridge technology, and other techniques to improve the high-speed performance by reducing parasitic elements and maintaining the substrate resistivity during the fabrication process. The technology has resulted in n-channel device cut-off frequencies (f/sub max/) of 21 GHz, with 40-GHz capability predicted by modeling.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1991.235329