Suppression of Auger recombination effects in compressively strained quantum-well lasers

Suppression of Auger recombination effects in compressively strained quantum-well lasers

Based on detailed valence band structure, a Monte Carlo analysis of the Auger recombination effects in compressively strained quantum-well diode lasers has been carried out. The recombination current is found to increase with carrier density, but at a rate far less rapidly than the conventional n/su...

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Veröffentlicht in:IEEE journal of quantum electronics 1993-06, Vol.29 (6), p.1544-1552
Hauptverfasser: Lui, W.W., Yamanaka, T., Yoshikuni, Y., Yokoyama, K., Seki, S.
Format: Artikel
Sprache:eng
Schlagworte:
426002 - Engineering- Lasers & Masers- (1990-)
AUGER EFFECT
CALCULATION METHODS
Capacitive sensors
CARRIER DENSITY
Charge carrier density
Condensed matter: electronic structure, electrical, magnetic, and optical properties
CURRENTS
Diode lasers
ELECTRIC CURRENTS
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
ELECTRONIC STRUCTURE
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
ENGINEERING
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
LASERS
MONTE CARLO METHOD
Monte Carlo methods
Optics
Physics
Quantum well lasers
Radiative recombination
RECOMBINATION
SEMICONDUCTOR DEVICES
Semiconductor diodes
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SOLID STATE LASERS
Statistics
THRESHOLD CURRENT
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Beschreibung
Zusammenfassung:Based on detailed valence band structure, a Monte Carlo analysis of the Auger recombination effects in compressively strained quantum-well diode lasers has been carried out. The recombination current is found to increase with carrier density, but at a rate far less rapidly than the conventional n/sup 3/-rule has suggested. At moderate carrier densities, the recombination current is also found to decrease exponentially with increasing strain.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.234389