High-performance Si/SiGe n-type modulation-doped transistors

Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material...

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Veröffentlicht in:	IEEE electron device letters 1993-07, Vol.14 (7), p.348-350
Hauptverfasser:	Ismail, K., Rishton, S., Chu, J.O., Chan, K., Meyerson, B.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design optimization Electron mobility Electronics Epitaxial layers Exact sciences and technology Germanium silicon alloys Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sheet materials Silicon germanium Temperature Transistors
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