High-performance Si/SiGe n-type modulation-doped transistors

High-performance Si/SiGe n-type modulation-doped transistors

Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 1993-07, Vol.14 (7), p.348-350
Hauptverfasser: Ismail, K., Rishton, S., Chu, J.O., Chan, K., Meyerson, B.S.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Design optimization
Electron mobility
Electronics
Epitaxial layers
Exact sciences and technology
Germanium silicon alloys
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sheet materials
Silicon germanium
Temperature
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.225569