High-performance Si/SiGe n-type modulation-doped transistors
Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material...
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| Veröffentlicht in: | IEEE electron device letters 1993-07, Vol.14 (7), p.348-350 |
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| container_end_page | 350 |
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| container_issue | 7 |
| container_start_page | 348 |
| container_title | IEEE electron device letters |
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| creator | Ismail, K. Rishton, S. Chu, J.O. Chan, K. Meyerson, B.S. |
| description | Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.< > |
| doi_str_mv | 10.1109/55.225569 |
| format | Article |
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Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.225569</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Design optimization ; Electron mobility ; Electronics ; Epitaxial layers ; Exact sciences and technology ; Germanium silicon alloys ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.< ></description><subject>Applied sciences</subject><subject>Design optimization</subject><subject>Electron mobility</subject><subject>Electronics</subject><subject>Epitaxial layers</subject><subject>Exact sciences and technology</subject><subject>Germanium silicon alloys</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sheet materials</subject><subject>Silicon germanium</subject><subject>Temperature</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNkD1PwzAQhi0EEqUwsDJlQEgMbs9fcSqxoAoKUiWGwhw5zgWMkjjY6dB_TyBVV7jlhnvu1auHkEsGM8ZgMVdqxrlS6eKITJhSGQWVimMyAS0ZFQzSU3IW4ycAk1LLCbl7cu8ftMNQ-dCY1mKycfONW2HS0n7XYdL4club3vmWlr7DMumDaaOLvQ_xnJxUpo54sd9T8vb48Lp8ouuX1fPyfk2tFLKnQnJAZIppA6UCXmiphlpMQJlqk2UVWGMKbjJRCFYxaxRaUXAthikBmZiSmzG3C_5ri7HPGxct1rVp0W9jzrOFEJrLf4BCcL7I_gZTGKqzdABvR9AGH2PAKu-Ca0zY5QzyH-O5UvlofGCv96EmWlNXgyjr4uFBZqDFL3Y1Yg4RD9d9xjegVIYH</recordid><startdate>19930701</startdate><enddate>19930701</enddate><creator>Ismail, K.</creator><creator>Rishton, S.</creator><creator>Chu, J.O.</creator><creator>Chan, K.</creator><creator>Meyerson, B.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19930701</creationdate><title>High-performance Si/SiGe n-type modulation-doped transistors</title><author>Ismail, K. ; Rishton, S. ; Chu, J.O. ; Chan, K. ; Meyerson, B.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c434t-3420ee1517a0d502b745056130d67a88f0caab2a83b31f1ca5ec3b273333d0e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Design optimization</topic><topic>Electron mobility</topic><topic>Electronics</topic><topic>Epitaxial layers</topic><topic>Exact sciences and technology</topic><topic>Germanium silicon alloys</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sheet materials</topic><topic>Silicon germanium</topic><topic>Temperature</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ismail, K.</creatorcontrib><creatorcontrib>Rishton, S.</creatorcontrib><creatorcontrib>Chu, J.O.</creatorcontrib><creatorcontrib>Chan, K.</creatorcontrib><creatorcontrib>Meyerson, B.S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ismail, K.</au><au>Rishton, S.</au><au>Chu, J.O.</au><au>Chan, K.</au><au>Meyerson, B.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance Si/SiGe n-type modulation-doped transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1993-07-01</date><risdate>1993</risdate><volume>14</volume><issue>7</issue><spage>348</spage><epage>350</epage><pages>348-350</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5- mu m-length T-gate have been fabricated. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm/sup 2//V-s at an electron sheet concentration of 1.5*10/sup 12/ cm/sup 2/, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.225569</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1993-07, Vol.14 (7), p.348-350 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE/IET Electronic Library |
| subjects | Applied sciences Design optimization Electron mobility Electronics Epitaxial layers Exact sciences and technology Germanium silicon alloys Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sheet materials Silicon germanium Temperature Transistors |
| title | High-performance Si/SiGe n-type modulation-doped transistors |
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