Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions

1/f noise in n-channel and p-channel power MOSFETs is investigated as a function of total dose and annealing. All the devices used in this study are nonhardened commercial parts. The preirradiation noise dependence on the gate and drain biases is analyzed. A different evolution of the noise measured...

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Veröffentlicht in:	IEEE transactions on nuclear science 1992-12, Vol.39 (6), p.2012-2017
Hauptverfasser:	Augier, P., Todsen, J.L., Zupac, D., Schrimpf, R.D., Galloway, K.F., Babcock, J.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Background noise Contracts Electronics Exact sciences and technology Kinetic theory MOSFETs Noise level Noise measurement Nuclear measurements Other multijunction devices. Power transistors. Thyristors Power measurement Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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