Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions

1/f noise in n-channel and p-channel power MOSFETs is investigated as a function of total dose and annealing. All the devices used in this study are nonhardened commercial parts. The preirradiation noise dependence on the gate and drain biases is analyzed. A different evolution of the noise measured in the linear and saturation regions through irradiation and annealing is reported. The build-up of interface traps was found to correlate well with the increase of noise during annealing for the p-channel devices. Measurements taken in the saturation region do not correlate as well with radiation-induced charge build-up, even though the overall noise increases slightly during irradiation.< >