GaAs MESFET device dependences on ion-implant tilt and rotation angles

GaAs MESFET device dependences on ion-implant tilt and rotation angles

Lightly Cr-doped liquid-encapsulated Czochralski (LEC) GaAs wafers were implanted with 5*10/sup 12/ 100-keV Si/sup 29/ ions/cm/sup 2/ at tilt angles between 0 and 13 degrees and at rotation angles between 0 and 45 degrees C. Capacitance-voltage measurements were then made to determine electron profi...

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Veröffentlicht in:IEEE electron device letters 1988-03, Vol.9 (3), p.139-041
Hauptverfasser: Rosemblatt, D.H., Hitchens, W.R., Anholt, R.E., Sigmon, T.W.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance measurement
Capacitance-voltage characteristics
Electronics
Electrons
Exact sciences and technology
Gallium arsenide
Implants
Impurities
Laboratories
MESFETs
Rotation measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tail
Transistors
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Beschreibung
Zusammenfassung:Lightly Cr-doped liquid-encapsulated Czochralski (LEC) GaAs wafers were implanted with 5*10/sup 12/ 100-keV Si/sup 29/ ions/cm/sup 2/ at tilt angles between 0 and 13 degrees and at rotation angles between 0 and 45 degrees C. Capacitance-voltage measurements were then made to determine electron profiles. It was found that cross-wafer device uniformity can be improved using implant tilt angles greater than 9 degrees . For microwave MESFET devices, the maximum transconductances at low I/sub DS/ are achieved using tilt angles greater than 6 degrees and rotation angles greater than 30 degrees .< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.2068