Two-dimensional MOS device modeling at low-temperature

Develops a two-dimensional numerical model for short-channel MOSFETs over a temperature range of 55-350 K. This model is equivalent to that of Selberherr. The simplification of Fermi-Dirac integrals for different temperature ranges is presented. Gummel's conventional decoupled method is used fo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ghazavi, P., Ho, F.D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Convergence Integral equations Iterative algorithms Iterative methods MOS devices MOSFETs Nonlinear equations Numerical models Semiconductor process modeling Temperature distribution
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