Two-dimensional MOS device modeling at low-temperature

Develops a two-dimensional numerical model for short-channel MOSFETs over a temperature range of 55-350 K. This model is equivalent to that of Selberherr. The simplification of Fermi-Dirac integrals for different temperature ranges is presented. Gummel's conventional decoupled method is used for linearization of basic semiconductor equations. In conjunction with Gummel's algorithm overrelaxation was used to speed up the convergence. A strongly implicit iterative method proposed by Stone was used to solve the nonlinear equations. The preliminary results for incorporating the simplified approximation for the Fermi-Dirac integrals into the MOS device modeling at low temperature are reported. These results include the ionized doping distributions, the threshold voltage, and the subthreshold characteristics of the device at low temperature, which are compared with those at room temperature.< >