A 15 ns 16 Mb CMOS SRAM with reduced voltage amplitude data bus
A 15-ns 16-Mbit CMOS SRAM which uses a reduced voltage amplitude data bus and a hierarchical sense amplifier scheme is described. The SRAM is organized as 4 Mwords*4 bits. Fast access time and low power dissipation are obtained by a reduced-voltage-amplitude data bus connected to a latched cascaded...
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creator | Matsumiya, M. Kawashima, S. Sakata, M. Miyabo, T. Koga, T. Itabashi, K. Mizutani, K. Ema, T. Toyoda, K. Yabu, T. Shimada, H. Suzuki, N. Ookura, M. |
description | A 15-ns 16-Mbit CMOS SRAM which uses a reduced voltage amplitude data bus and a hierarchical sense amplifier scheme is described. The SRAM is organized as 4 Mwords*4 bits. Fast access time and low power dissipation are obtained by a reduced-voltage-amplitude data bus connected to a latched cascaded sense amplifier and current sense amplifier. The waveforms of the address input and the data output lines at room temperature with a 3-V supply are shown. The access time is typically 15 ns, with an active current consumption of 55 mA at 3.0 V and 30 MHz.< > |
doi_str_mv | 10.1109/ISSCC.1992.200488 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_200488</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>200488</ieee_id><sourcerecordid>200488</sourcerecordid><originalsourceid>FETCH-ieee_primary_2004883</originalsourceid><addsrcrecordid>eNp9jrsKwjAUQAMi-OoH6HR_wHrTdyYpQdGhCMa9pDZqpNXSpIp_r6CzZznDWQ4hU4oupcgWWyE4dyljnushBknSIyOME_QxjP1oQBxjrvghCJEFyZAsU6Ah3AzQCLICeLYTIPZpBk9tL9CqsjuqEh73ysqzAlk3lbZdqaCUVkLRmQnpn2RllPPzmMzWqwPfzLVSKm9aXcv2lX9X_L_xDakbNSs</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A 15 ns 16 Mb CMOS SRAM with reduced voltage amplitude data bus</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Matsumiya, M. ; Kawashima, S. ; Sakata, M. ; Miyabo, T. ; Koga, T. ; Itabashi, K. ; Mizutani, K. ; Ema, T. ; Toyoda, K. ; Yabu, T. ; Shimada, H. ; Suzuki, N. ; Ookura, M.</creator><creatorcontrib>Matsumiya, M. ; Kawashima, S. ; Sakata, M. ; Miyabo, T. ; Koga, T. ; Itabashi, K. ; Mizutani, K. ; Ema, T. ; Toyoda, K. ; Yabu, T. ; Shimada, H. ; Suzuki, N. ; Ookura, M.</creatorcontrib><description>A 15-ns 16-Mbit CMOS SRAM which uses a reduced voltage amplitude data bus and a hierarchical sense amplifier scheme is described. The SRAM is organized as 4 Mwords*4 bits. Fast access time and low power dissipation are obtained by a reduced-voltage-amplitude data bus connected to a latched cascaded sense amplifier and current sense amplifier. The waveforms of the address input and the data output lines at room temperature with a 3-V supply are shown. The access time is typically 15 ns, with an active current consumption of 55 mA at 3.0 V and 30 MHz.< ></description><identifier>ISBN: 0780305736</identifier><identifier>ISBN: 9780780305731</identifier><identifier>DOI: 10.1109/ISSCC.1992.200488</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Current measurement ; Delay effects ; Energy consumption ; Lithography ; Power dissipation ; Random access memory ; Semiconductor device measurement ; Thin film transistors ; Voltage</subject><ispartof>1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 1992, p.214-215</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/200488$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/200488$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Matsumiya, M.</creatorcontrib><creatorcontrib>Kawashima, S.</creatorcontrib><creatorcontrib>Sakata, M.</creatorcontrib><creatorcontrib>Miyabo, T.</creatorcontrib><creatorcontrib>Koga, T.</creatorcontrib><creatorcontrib>Itabashi, K.</creatorcontrib><creatorcontrib>Mizutani, K.</creatorcontrib><creatorcontrib>Ema, T.</creatorcontrib><creatorcontrib>Toyoda, K.</creatorcontrib><creatorcontrib>Yabu, T.</creatorcontrib><creatorcontrib>Shimada, H.</creatorcontrib><creatorcontrib>Suzuki, N.</creatorcontrib><creatorcontrib>Ookura, M.</creatorcontrib><title>A 15 ns 16 Mb CMOS SRAM with reduced voltage amplitude data bus</title><title>1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers</title><addtitle>ISSCC</addtitle><description>A 15-ns 16-Mbit CMOS SRAM which uses a reduced voltage amplitude data bus and a hierarchical sense amplifier scheme is described. The SRAM is organized as 4 Mwords*4 bits. Fast access time and low power dissipation are obtained by a reduced-voltage-amplitude data bus connected to a latched cascaded sense amplifier and current sense amplifier. The waveforms of the address input and the data output lines at room temperature with a 3-V supply are shown. The access time is typically 15 ns, with an active current consumption of 55 mA at 3.0 V and 30 MHz.< ></description><subject>Circuits</subject><subject>Current measurement</subject><subject>Delay effects</subject><subject>Energy consumption</subject><subject>Lithography</subject><subject>Power dissipation</subject><subject>Random access memory</subject><subject>Semiconductor device measurement</subject><subject>Thin film transistors</subject><subject>Voltage</subject><isbn>0780305736</isbn><isbn>9780780305731</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrsKwjAUQAMi-OoH6HR_wHrTdyYpQdGhCMa9pDZqpNXSpIp_r6CzZznDWQ4hU4oupcgWWyE4dyljnushBknSIyOME_QxjP1oQBxjrvghCJEFyZAsU6Ah3AzQCLICeLYTIPZpBk9tL9CqsjuqEh73ysqzAlk3lbZdqaCUVkLRmQnpn2RllPPzmMzWqwPfzLVSKm9aXcv2lX9X_L_xDakbNSs</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Matsumiya, M.</creator><creator>Kawashima, S.</creator><creator>Sakata, M.</creator><creator>Miyabo, T.</creator><creator>Koga, T.</creator><creator>Itabashi, K.</creator><creator>Mizutani, K.</creator><creator>Ema, T.</creator><creator>Toyoda, K.</creator><creator>Yabu, T.</creator><creator>Shimada, H.</creator><creator>Suzuki, N.</creator><creator>Ookura, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1992</creationdate><title>A 15 ns 16 Mb CMOS SRAM with reduced voltage amplitude data bus</title><author>Matsumiya, M. ; Kawashima, S. ; Sakata, M. ; Miyabo, T. ; Koga, T. ; Itabashi, K. ; Mizutani, K. ; Ema, T. ; Toyoda, K. ; Yabu, T. ; Shimada, H. ; Suzuki, N. ; Ookura, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_2004883</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Circuits</topic><topic>Current measurement</topic><topic>Delay effects</topic><topic>Energy consumption</topic><topic>Lithography</topic><topic>Power dissipation</topic><topic>Random access memory</topic><topic>Semiconductor device measurement</topic><topic>Thin film transistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Matsumiya, M.</creatorcontrib><creatorcontrib>Kawashima, S.</creatorcontrib><creatorcontrib>Sakata, M.</creatorcontrib><creatorcontrib>Miyabo, T.</creatorcontrib><creatorcontrib>Koga, T.</creatorcontrib><creatorcontrib>Itabashi, K.</creatorcontrib><creatorcontrib>Mizutani, K.</creatorcontrib><creatorcontrib>Ema, T.</creatorcontrib><creatorcontrib>Toyoda, K.</creatorcontrib><creatorcontrib>Yabu, T.</creatorcontrib><creatorcontrib>Shimada, H.</creatorcontrib><creatorcontrib>Suzuki, N.</creatorcontrib><creatorcontrib>Ookura, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Matsumiya, M.</au><au>Kawashima, S.</au><au>Sakata, M.</au><au>Miyabo, T.</au><au>Koga, T.</au><au>Itabashi, K.</au><au>Mizutani, K.</au><au>Ema, T.</au><au>Toyoda, K.</au><au>Yabu, T.</au><au>Shimada, H.</au><au>Suzuki, N.</au><au>Ookura, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 15 ns 16 Mb CMOS SRAM with reduced voltage amplitude data bus</atitle><btitle>1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers</btitle><stitle>ISSCC</stitle><date>1992</date><risdate>1992</risdate><spage>214</spage><epage>215</epage><pages>214-215</pages><isbn>0780305736</isbn><isbn>9780780305731</isbn><abstract>A 15-ns 16-Mbit CMOS SRAM which uses a reduced voltage amplitude data bus and a hierarchical sense amplifier scheme is described. The SRAM is organized as 4 Mwords*4 bits. Fast access time and low power dissipation are obtained by a reduced-voltage-amplitude data bus connected to a latched cascaded sense amplifier and current sense amplifier. The waveforms of the address input and the data output lines at room temperature with a 3-V supply are shown. The access time is typically 15 ns, with an active current consumption of 55 mA at 3.0 V and 30 MHz.< ></abstract><pub>IEEE</pub><doi>10.1109/ISSCC.1992.200488</doi></addata></record> |
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identifier | ISBN: 0780305736 |
ispartof | 1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 1992, p.214-215 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Circuits Current measurement Delay effects Energy consumption Lithography Power dissipation Random access memory Semiconductor device measurement Thin film transistors Voltage |
title | A 15 ns 16 Mb CMOS SRAM with reduced voltage amplitude data bus |
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