Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics
The effects of post-oxidation N/sub 2/O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N/sub 2/O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N/sub...
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Veröffentlicht in: | IEEE electron device letters 1992-08, Vol.13 (8), p.402-404 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effects of post-oxidation N/sub 2/O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N/sub 2/O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N/sub 2/O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N/sub 2/O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides.< > |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/55.192772 |