23-40 GHz InP HEMT MMIC distributed mixer
The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of...
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| container_end_page | 1066 vol.2 |
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| container_start_page | 1063 |
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| container_volume | ol. 2 |
| creator | Majidi-Ahy, R. Nishimoto, C. Russell, J. Weiming Ou Bandy, S. Zdasiuk, G. |
| description | The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500 by 1000 mu m.< > |
| doi_str_mv | 10.1109/MWSYM.1992.188174 |
| format | Conference Proceeding |
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The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500 by 1000 mu m.< ></description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 9780780306110</identifier><identifier>ISBN: 0780306112</identifier><identifier>EISSN: 2576-7216</identifier><identifier>DOI: 10.1109/MWSYM.1992.188174</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; Frequency ; Gain ; HEMTs ; Indium phosphide ; Millimeter wave integrated circuits ; Millimeter wave transistors ; Mixers ; MMICs ; MODFETs</subject><ispartof>1992 IEEE MTT-S Microwave Symposium Digest, 1992, Vol.ol. 2, p.1063-1066 vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/188174$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,2052,4036,4037,27901,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/188174$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Majidi-Ahy, R.</creatorcontrib><creatorcontrib>Nishimoto, C.</creatorcontrib><creatorcontrib>Russell, J.</creatorcontrib><creatorcontrib>Weiming Ou</creatorcontrib><creatorcontrib>Bandy, S.</creatorcontrib><creatorcontrib>Zdasiuk, G.</creatorcontrib><title>23-40 GHz InP HEMT MMIC distributed mixer</title><title>1992 IEEE MTT-S Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500 by 1000 mu m.< ></description><subject>Bandwidth</subject><subject>Frequency</subject><subject>Gain</subject><subject>HEMTs</subject><subject>Indium phosphide</subject><subject>Millimeter wave integrated circuits</subject><subject>Millimeter wave transistors</subject><subject>Mixers</subject><subject>MMICs</subject><subject>MODFETs</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>9780780306110</isbn><isbn>0780306112</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1992</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtLxDAUhYMPcBj7A3TVleCiNTePJncpZR6FKQqOqKuStClEOg-bFtRfb2E8fHA2H2dxCLkBmgJQfCjfXj7KFBBZClqDEmdkxqTKEsUgOycRKk0nOM0m_YLMKAhMMiHfr0gUwiedIiRFymbknvFE0Hi1_o2L_XO8XpTbuCyLPG58GHpvx8E18c5_u_6aXLamCy767zl5XS62-TrZPK2K_HGTeAA9JMhVa1EYaTOjqKwlbU3LdO2kVVaj4coasABokVta20wJbBkYyxBdox2fk7vT7rE_fI0uDNXOh9p1ndm7wxgqJqVgSupJvD2J3jlXHXu_M_1PdTqE_wEcnE7P</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Majidi-Ahy, R.</creator><creator>Nishimoto, C.</creator><creator>Russell, J.</creator><creator>Weiming Ou</creator><creator>Bandy, S.</creator><creator>Zdasiuk, G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1992</creationdate><title>23-40 GHz InP HEMT MMIC distributed mixer</title><author>Majidi-Ahy, R. ; Nishimoto, C. ; Russell, J. ; Weiming Ou ; Bandy, S. ; Zdasiuk, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-937fb94a5b6a705c50faf28ce5b7b89a37ba1b119b93b0cb6749f21ab299ed8e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Bandwidth</topic><topic>Frequency</topic><topic>Gain</topic><topic>HEMTs</topic><topic>Indium phosphide</topic><topic>Millimeter wave integrated circuits</topic><topic>Millimeter wave transistors</topic><topic>Mixers</topic><topic>MMICs</topic><topic>MODFETs</topic><toplevel>online_resources</toplevel><creatorcontrib>Majidi-Ahy, R.</creatorcontrib><creatorcontrib>Nishimoto, C.</creatorcontrib><creatorcontrib>Russell, J.</creatorcontrib><creatorcontrib>Weiming Ou</creatorcontrib><creatorcontrib>Bandy, S.</creatorcontrib><creatorcontrib>Zdasiuk, G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Majidi-Ahy, R.</au><au>Nishimoto, C.</au><au>Russell, J.</au><au>Weiming Ou</au><au>Bandy, S.</au><au>Zdasiuk, G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>23-40 GHz InP HEMT MMIC distributed mixer</atitle><btitle>1992 IEEE MTT-S Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>1992</date><risdate>1992</risdate><volume>ol. 2</volume><spage>1063</spage><epage>1066 vol.2</epage><pages>1063-1066 vol.2</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>9780780306110</isbn><isbn>0780306112</isbn><abstract>The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500 by 1000 mu m.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSYM.1992.188174</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0149-645X |
| ispartof | 1992 IEEE MTT-S Microwave Symposium Digest, 1992, Vol.ol. 2, p.1063-1066 vol.2 |
| issn | 0149-645X 2576-7216 |
| language | eng |
| recordid | cdi_ieee_primary_188174 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bandwidth Frequency Gain HEMTs Indium phosphide Millimeter wave integrated circuits Millimeter wave transistors Mixers MMICs MODFETs |
| title | 23-40 GHz InP HEMT MMIC distributed mixer |
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