23-40 GHz InP HEMT MMIC distributed mixer

23-40 GHz InP HEMT MMIC distributed mixer

The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Majidi-Ahy, R., Nishimoto, C., Russell, J., Weiming Ou, Bandy, S., Zdasiuk, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Frequency
Gain
HEMTs
Indium phosphide
Millimeter wave integrated circuits
Millimeter wave transistors
Mixers
MMICs
MODFETs
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz, and fixed local oscillator frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500 by 1000 mu m.< >
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1992.188174