Ultra-flat low-power process insensitive Ku-band HEMT feedback MMIC

Ultra-flat low-power process insensitive Ku-band HEMT feedback MMIC

A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipa...

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Bibliographische Detailangaben
Hauptverfasser: Helms, D.R., Fithian, M.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Feedback amplifiers
Frequency
Gain
HEMTs
Linearity
MESFETs
MMICs
Power amplifiers
Power dissipation
Virtual manufacturing
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Beschreibung
Zusammenfassung:A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.< >
DOI:10.1109/MCS.1992.185986