On the mechanism of dielectric breakdown of ceramic for HV capacitors

On the mechanism of dielectric breakdown of ceramic for HV capacitors

Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Wan Rongen, Chen Shoutian
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Additives
Bismuth
Ceramics
Dielectric breakdown
Dielectric constant
Dielectric materials
Materials testing
Performance evaluation
Temperature
Thermal stresses
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Zusammenfassung:Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.< >
DOI:10.1109/ICPADM.1991.172257