Unusual Growth of InP Nanowires Grown on Silicon Surfaces
Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 623 |
|---|---|
| container_issue | |
| container_start_page | 620 |
| container_title | |
| container_volume | 2 |
| creator | Kimukin, I. Johns, C.D. Edgar, C.W. Islam, M.S. Sungsoo Yi |
| description | Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on |
| doi_str_mv | 10.1109/NANO.2006.247730 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1717180</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1717180</ieee_id><sourcerecordid>1717180</sourcerecordid><originalsourceid>FETCH-LOGICAL-i1320-96abb82f49d2806fbc1ffc6846f776ae54a661622a4b0fbcd1cead38b7a673a53</originalsourceid><addsrcrecordid>eNo9jEtLw0AUhQcfYKnZC27mDyTembmZx7IUbQslFbTrcpPM4EhMJGMo_nvrA89ZfHA-OIzdCCiEAHdXLapdIQF0IdEYBWdsJhxi7pSFc5Y5YwVKRABjyot_59wVy1J6hVOwRIUwY27fT2mijq_G4fjxwofAN_0jr6gfjnH06Wfv-dDzp9jF5pvTGKjx6ZpdBuqSz_44Z_uH--flOt_uVpvlYptHoSTkTlNdWxnQtdKCDnUjQmi0RR2M0eRLJK2FlpKwhpNtReOpVbY2pI2iUs3Z7e9v9N4f3sf4RuPnQZhTLagvsj5JGQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Unusual Growth of InP Nanowires Grown on Silicon Surfaces</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kimukin, I. ; Johns, C.D. ; Edgar, C.W. ; Islam, M.S. ; Sungsoo Yi</creator><creatorcontrib>Kimukin, I. ; Johns, C.D. ; Edgar, C.W. ; Islam, M.S. ; Sungsoo Yi</creatorcontrib><description>Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on</description><identifier>ISSN: 1944-9399</identifier><identifier>ISBN: 9781424400775</identifier><identifier>ISBN: 1424400775</identifier><identifier>EISSN: 1944-9380</identifier><identifier>DOI: 10.1109/NANO.2006.247730</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Atomic layer deposition ; Gallium arsenide ; Gold ; Indium phosphide ; InP ; Lattices ; MOCVD Growth ; Nanowire ; Nanowires ; Optical microscopy ; Scanning electron microscopy ; Silicon</subject><ispartof>2006 Sixth IEEE Conference on Nanotechnology, 2006, Vol.2, p.620-623</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1717180$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,4051,4052,27929,54924</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1717180$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kimukin, I.</creatorcontrib><creatorcontrib>Johns, C.D.</creatorcontrib><creatorcontrib>Edgar, C.W.</creatorcontrib><creatorcontrib>Islam, M.S.</creatorcontrib><creatorcontrib>Sungsoo Yi</creatorcontrib><title>Unusual Growth of InP Nanowires Grown on Silicon Surfaces</title><title>2006 Sixth IEEE Conference on Nanotechnology</title><addtitle>NANO</addtitle><description>Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on</description><subject>Absorption</subject><subject>Atomic layer deposition</subject><subject>Gallium arsenide</subject><subject>Gold</subject><subject>Indium phosphide</subject><subject>InP</subject><subject>Lattices</subject><subject>MOCVD Growth</subject><subject>Nanowire</subject><subject>Nanowires</subject><subject>Optical microscopy</subject><subject>Scanning electron microscopy</subject><subject>Silicon</subject><issn>1944-9399</issn><issn>1944-9380</issn><isbn>9781424400775</isbn><isbn>1424400775</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9jEtLw0AUhQcfYKnZC27mDyTembmZx7IUbQslFbTrcpPM4EhMJGMo_nvrA89ZfHA-OIzdCCiEAHdXLapdIQF0IdEYBWdsJhxi7pSFc5Y5YwVKRABjyot_59wVy1J6hVOwRIUwY27fT2mijq_G4fjxwofAN_0jr6gfjnH06Wfv-dDzp9jF5pvTGKjx6ZpdBuqSz_44Z_uH--flOt_uVpvlYptHoSTkTlNdWxnQtdKCDnUjQmi0RR2M0eRLJK2FlpKwhpNtReOpVbY2pI2iUs3Z7e9v9N4f3sf4RuPnQZhTLagvsj5JGQ</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Kimukin, I.</creator><creator>Johns, C.D.</creator><creator>Edgar, C.W.</creator><creator>Islam, M.S.</creator><creator>Sungsoo Yi</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2006</creationdate><title>Unusual Growth of InP Nanowires Grown on Silicon Surfaces</title><author>Kimukin, I. ; Johns, C.D. ; Edgar, C.W. ; Islam, M.S. ; Sungsoo Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1320-96abb82f49d2806fbc1ffc6846f776ae54a661622a4b0fbcd1cead38b7a673a53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Absorption</topic><topic>Atomic layer deposition</topic><topic>Gallium arsenide</topic><topic>Gold</topic><topic>Indium phosphide</topic><topic>InP</topic><topic>Lattices</topic><topic>MOCVD Growth</topic><topic>Nanowire</topic><topic>Nanowires</topic><topic>Optical microscopy</topic><topic>Scanning electron microscopy</topic><topic>Silicon</topic><toplevel>online_resources</toplevel><creatorcontrib>Kimukin, I.</creatorcontrib><creatorcontrib>Johns, C.D.</creatorcontrib><creatorcontrib>Edgar, C.W.</creatorcontrib><creatorcontrib>Islam, M.S.</creatorcontrib><creatorcontrib>Sungsoo Yi</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kimukin, I.</au><au>Johns, C.D.</au><au>Edgar, C.W.</au><au>Islam, M.S.</au><au>Sungsoo Yi</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Unusual Growth of InP Nanowires Grown on Silicon Surfaces</atitle><btitle>2006 Sixth IEEE Conference on Nanotechnology</btitle><stitle>NANO</stitle><date>2006</date><risdate>2006</risdate><volume>2</volume><spage>620</spage><epage>623</epage><pages>620-623</pages><issn>1944-9399</issn><eissn>1944-9380</eissn><isbn>9781424400775</isbn><isbn>1424400775</isbn><abstract>Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on</abstract><pub>IEEE</pub><doi>10.1109/NANO.2006.247730</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1944-9399 |
| ispartof | 2006 Sixth IEEE Conference on Nanotechnology, 2006, Vol.2, p.620-623 |
| issn | 1944-9399 1944-9380 |
| language | eng |
| recordid | cdi_ieee_primary_1717180 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Absorption Atomic layer deposition Gallium arsenide Gold Indium phosphide InP Lattices MOCVD Growth Nanowire Nanowires Optical microscopy Scanning electron microscopy Silicon |
| title | Unusual Growth of InP Nanowires Grown on Silicon Surfaces |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T14%3A25%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Unusual%20Growth%20of%20InP%20Nanowires%20Grown%20on%20Silicon%20Surfaces&rft.btitle=2006%20Sixth%20IEEE%20Conference%20on%20Nanotechnology&rft.au=Kimukin,%20I.&rft.date=2006&rft.volume=2&rft.spage=620&rft.epage=623&rft.pages=620-623&rft.issn=1944-9399&rft.eissn=1944-9380&rft.isbn=9781424400775&rft.isbn_list=1424400775&rft_id=info:doi/10.1109/NANO.2006.247730&rft_dat=%3Cieee_6IE%3E1717180%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1717180&rfr_iscdi=true |