Unusual Growth of InP Nanowires Grown on Silicon Surfaces

Unusual Growth of InP Nanowires Grown on Silicon Surfaces

Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on

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Bibliographische Detailangaben
Hauptverfasser: Kimukin, I., Johns, C.D., Edgar, C.W., Islam, M.S., Sungsoo Yi
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Atomic layer deposition
Gallium arsenide
Gold
Indium phosphide
InP
Lattices
MOCVD Growth
Nanowire
Nanowires
Optical microscopy
Scanning electron microscopy
Silicon
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Beschreibung
Zusammenfassung:Heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high speed optoelectronic devices with mature Si technology. We report the growth of single-crystalline InP nanowires on
ISSN:1944-9399
1944-9380
DOI:10.1109/NANO.2006.247730