A High Performance Photodetector in Standard SiGe BiCMOS Technology
This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with...
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creator | Kuang-Sheng Lai Ji-Cheng Huang Hsu, K.Y.-J. |
description | This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity |
doi_str_mv | 10.1109/ISTDM.2006.246498 |
format | Conference Proceeding |
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A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity</description><identifier>ISBN: 9781424404612</identifier><identifier>ISBN: 1424404614</identifier><identifier>DOI: 10.1109/ISTDM.2006.246498</identifier><language>eng</language><publisher>IEEE</publisher><subject>BiCMOS integrated circuits ; Dark current ; Germanium silicon alloys ; Page description languages ; Phase change materials ; Photodetectors ; Phototransistors ; Silicon germanium ; Testing ; Virtual colonoscopy</subject><ispartof>2006 International SiGe Technology and Device Meeting, 2006, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1715992$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1715992$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuang-Sheng Lai</creatorcontrib><creatorcontrib>Ji-Cheng Huang</creatorcontrib><creatorcontrib>Hsu, K.Y.-J.</creatorcontrib><title>A High Performance Photodetector in Standard SiGe BiCMOS Technology</title><title>2006 International SiGe Technology and Device Meeting</title><addtitle>ISTDM</addtitle><description>This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity</description><subject>BiCMOS integrated circuits</subject><subject>Dark current</subject><subject>Germanium silicon alloys</subject><subject>Page description languages</subject><subject>Phase change materials</subject><subject>Photodetectors</subject><subject>Phototransistors</subject><subject>Silicon germanium</subject><subject>Testing</subject><subject>Virtual colonoscopy</subject><isbn>9781424404612</isbn><isbn>1424404614</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotzMtKw0AUgOEBEZSaBxA38wKJc8t0zrJGbQstLST7MpeTZqTNyCSbvr2C_ptv9xPyzFnFOYPXbdu97yvBmK6E0grMHSlgabgSSjGluXggxTR9sd8k6FroR9Ks6CaeB3rE3Kd8taNHehzSnALO6OeUaRxpO9sx2BxoG9dI32KzP7S0Qz-M6ZLOtydy39vLhMW_C9J9fnTNptwd1ttmtSsjsLmUUlnrQ1C94w57DTog56JmFrTrsRZOysAUV2gMejRWKOuC8Q4cgOu1XJCXv21ExNN3jlebbye-5DWAkD_6A0l3</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Kuang-Sheng Lai</creator><creator>Ji-Cheng Huang</creator><creator>Hsu, K.Y.-J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2006</creationdate><title>A High Performance Photodetector in Standard SiGe BiCMOS Technology</title><author>Kuang-Sheng Lai ; Ji-Cheng Huang ; Hsu, K.Y.-J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-334aacdd4fb1bef696de11250a96bfe52b33d0414e88ece8a24abd8cb9b99bf63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BiCMOS integrated circuits</topic><topic>Dark current</topic><topic>Germanium silicon alloys</topic><topic>Page description languages</topic><topic>Phase change materials</topic><topic>Photodetectors</topic><topic>Phototransistors</topic><topic>Silicon germanium</topic><topic>Testing</topic><topic>Virtual colonoscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Kuang-Sheng Lai</creatorcontrib><creatorcontrib>Ji-Cheng Huang</creatorcontrib><creatorcontrib>Hsu, K.Y.-J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuang-Sheng Lai</au><au>Ji-Cheng Huang</au><au>Hsu, K.Y.-J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A High Performance Photodetector in Standard SiGe BiCMOS Technology</atitle><btitle>2006 International SiGe Technology and Device Meeting</btitle><stitle>ISTDM</stitle><date>2006</date><risdate>2006</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><isbn>9781424404612</isbn><isbn>1424404614</isbn><abstract>This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity</abstract><pub>IEEE</pub><doi>10.1109/ISTDM.2006.246498</doi><tpages>2</tpages></addata></record> |
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subjects | BiCMOS integrated circuits Dark current Germanium silicon alloys Page description languages Phase change materials Photodetectors Phototransistors Silicon germanium Testing Virtual colonoscopy |
title | A High Performance Photodetector in Standard SiGe BiCMOS Technology |
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