A High Performance Photodetector in Standard SiGe BiCMOS Technology

This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with...

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Hauptverfasser: Kuang-Sheng Lai, Ji-Cheng Huang, Hsu, K.Y.-J.
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description This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1715992</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1715992</ieee_id><sourcerecordid>1715992</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-334aacdd4fb1bef696de11250a96bfe52b33d0414e88ece8a24abd8cb9b99bf63</originalsourceid><addsrcrecordid>eNotzMtKw0AUgOEBEZSaBxA38wKJc8t0zrJGbQstLST7MpeTZqTNyCSbvr2C_ptv9xPyzFnFOYPXbdu97yvBmK6E0grMHSlgabgSSjGluXggxTR9sd8k6FroR9Ks6CaeB3rE3Kd8taNHehzSnALO6OeUaRxpO9sx2BxoG9dI32KzP7S0Qz-M6ZLOtydy39vLhMW_C9J9fnTNptwd1ttmtSsjsLmUUlnrQ1C94w57DTog56JmFrTrsRZOysAUV2gMejRWKOuC8Q4cgOu1XJCXv21ExNN3jlebbye-5DWAkD_6A0l3</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A High Performance Photodetector in Standard SiGe BiCMOS Technology</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kuang-Sheng Lai ; Ji-Cheng Huang ; Hsu, K.Y.-J.</creator><creatorcontrib>Kuang-Sheng Lai ; Ji-Cheng Huang ; Hsu, K.Y.-J.</creatorcontrib><description>This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity</description><identifier>ISBN: 9781424404612</identifier><identifier>ISBN: 1424404614</identifier><identifier>DOI: 10.1109/ISTDM.2006.246498</identifier><language>eng</language><publisher>IEEE</publisher><subject>BiCMOS integrated circuits ; Dark current ; Germanium silicon alloys ; Page description languages ; Phase change materials ; Photodetectors ; Phototransistors ; Silicon germanium ; Testing ; Virtual colonoscopy</subject><ispartof>2006 International SiGe Technology and Device Meeting, 2006, p.1-2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1715992$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1715992$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuang-Sheng Lai</creatorcontrib><creatorcontrib>Ji-Cheng Huang</creatorcontrib><creatorcontrib>Hsu, K.Y.-J.</creatorcontrib><title>A High Performance Photodetector in Standard SiGe BiCMOS Technology</title><title>2006 International SiGe Technology and Device Meeting</title><addtitle>ISTDM</addtitle><description>This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity</description><subject>BiCMOS integrated circuits</subject><subject>Dark current</subject><subject>Germanium silicon alloys</subject><subject>Page description languages</subject><subject>Phase change materials</subject><subject>Photodetectors</subject><subject>Phototransistors</subject><subject>Silicon germanium</subject><subject>Testing</subject><subject>Virtual colonoscopy</subject><isbn>9781424404612</isbn><isbn>1424404614</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotzMtKw0AUgOEBEZSaBxA38wKJc8t0zrJGbQstLST7MpeTZqTNyCSbvr2C_ptv9xPyzFnFOYPXbdu97yvBmK6E0grMHSlgabgSSjGluXggxTR9sd8k6FroR9Ks6CaeB3rE3Kd8taNHehzSnALO6OeUaRxpO9sx2BxoG9dI32KzP7S0Qz-M6ZLOtydy39vLhMW_C9J9fnTNptwd1ttmtSsjsLmUUlnrQ1C94w57DTog56JmFrTrsRZOysAUV2gMejRWKOuC8Q4cgOu1XJCXv21ExNN3jlebbye-5DWAkD_6A0l3</recordid><startdate>2006</startdate><enddate>2006</enddate><creator>Kuang-Sheng Lai</creator><creator>Ji-Cheng Huang</creator><creator>Hsu, K.Y.-J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2006</creationdate><title>A High Performance Photodetector in Standard SiGe BiCMOS Technology</title><author>Kuang-Sheng Lai ; Ji-Cheng Huang ; Hsu, K.Y.-J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-334aacdd4fb1bef696de11250a96bfe52b33d0414e88ece8a24abd8cb9b99bf63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BiCMOS integrated circuits</topic><topic>Dark current</topic><topic>Germanium silicon alloys</topic><topic>Page description languages</topic><topic>Phase change materials</topic><topic>Photodetectors</topic><topic>Phototransistors</topic><topic>Silicon germanium</topic><topic>Testing</topic><topic>Virtual colonoscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Kuang-Sheng Lai</creatorcontrib><creatorcontrib>Ji-Cheng Huang</creatorcontrib><creatorcontrib>Hsu, K.Y.-J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuang-Sheng Lai</au><au>Ji-Cheng Huang</au><au>Hsu, K.Y.-J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A High Performance Photodetector in Standard SiGe BiCMOS Technology</atitle><btitle>2006 International SiGe Technology and Device Meeting</btitle><stitle>ISTDM</stitle><date>2006</date><risdate>2006</risdate><spage>1</spage><epage>2</epage><pages>1-2</pages><isbn>9781424404612</isbn><isbn>1424404614</isbn><abstract>This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity</abstract><pub>IEEE</pub><doi>10.1109/ISTDM.2006.246498</doi><tpages>2</tpages></addata></record>
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subjects BiCMOS integrated circuits
Dark current
Germanium silicon alloys
Page description languages
Phase change materials
Photodetectors
Phototransistors
Silicon germanium
Testing
Virtual colonoscopy
title A High Performance Photodetector in Standard SiGe BiCMOS Technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T14%3A02%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20High%20Performance%20Photodetector%20in%20Standard%20SiGe%20BiCMOS%20Technology&rft.btitle=2006%20International%20SiGe%20Technology%20and%20Device%20Meeting&rft.au=Kuang-Sheng%20Lai&rft.date=2006&rft.spage=1&rft.epage=2&rft.pages=1-2&rft.isbn=9781424404612&rft.isbn_list=1424404614&rft_id=info:doi/10.1109/ISTDM.2006.246498&rft_dat=%3Cieee_6IE%3E1715992%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1715992&rfr_iscdi=true