A High Performance Photodetector in Standard SiGe BiCMOS Technology

A High Performance Photodetector in Standard SiGe BiCMOS Technology

This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with...

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Bibliographische Detailangaben
Hauptverfasser: Kuang-Sheng Lai, Ji-Cheng Huang, Hsu, K.Y.-J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Dark current
Germanium silicon alloys
Page description languages
Phase change materials
Photodetectors
Phototransistors
Silicon germanium
Testing
Virtual colonoscopy
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Beschreibung
Zusammenfassung:This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD exhibits one order of the magnitude improvement in responsivity
DOI:10.1109/ISTDM.2006.246498