Characteristics of Superlattice LED with a Si0.8Ge0.2 or Si Capped Layer at Room Temperature

Characteristics of Superlattice LED with a Si0.8Ge0.2 or Si Capped Layer at Room Temperature

The comparison between the Si and Si 0.8 Ge 0.2 capping layers shows that the conduction band offset of Si 0.8 Ge 0.2 and Si can form a barrier for electrons, and that it can increase the quantity of carriers on conduction band. From the results of these experiments, the characteristics of carrier b...

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Bibliographische Detailangaben
Hauptverfasser: Peng, Y.H., Li, H.R., Chen, P.S., Suen, Y.W., Kuan, C.H., Lee, S.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Germanium silicon alloys
Laser sintering
Light emitting diodes
Luminescence
Ohmic contacts
PIN photodiodes
Silicon germanium
Stimulated emission
Superlattices
Temperature
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Zusammenfassung:The comparison between the Si and Si 0.8 Ge 0.2 capping layers shows that the conduction band offset of Si 0.8 Ge 0.2 and Si can form a barrier for electrons, and that it can increase the quantity of carriers on conduction band. From the results of these experiments, the characteristics of carrier blockers formed by hetero structure can be applied in IV-IV optoelectronics devices to achieve higher optical power
DOI:10.1109/ISTDM.2006.246497