Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics

Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics

In this work, we investigate the characteristics of collector current (I C ) and breakdown voltage (BV CEO ) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaI c and DeltaBV CEO is found to be strain-polarity dependent, and there is a trade-off between DeltaI...

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Hauptverfasser: Tzu-Juei Wang, Hung-Wei Chen, Chih-Hsin Ko, John Yeh, Ping-Chun Yeh, Shoou-Jinn Chang, San-Lein Wu, Wen-Chin Lee, Tang, D.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
CMOS technology
Compressive stress
Germanium silicon alloys
Heterojunction bipolar transistors
Microelectronics
Photonic band gap
Silicon germanium
Stress control
Tensile stress
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Zusammenfassung:In this work, we investigate the characteristics of collector current (I C ) and breakdown voltage (BV CEO ) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaI c and DeltaBV CEO is found to be strain-polarity dependent, and there is a trade-off between DeltaI c and DeltaBV CEO at the same stress condition
DOI:10.1109/ISTDM.2006.246602