Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference

Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference

This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge device...

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Hauptverfasser: DeJaeger, B., Kaczer, B., Zimmerman, P., Opsomer, K., Winderickx, G., Van Steenbergen, J., Van Moorhem, E., Bonzom, R., Leys, F., Arena, C., Bauer, M., Werkhoven, C., Meuris, M., Heyns, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Electron mobility
Fabrication
FETs
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Inductors
MOSFETs
Passivation
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Beschreibung
Zusammenfassung:This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge devices with a higher drive
DOI:10.1109/ISTDM.2006.246581