Simulated performance of SiC based OP-AMP at high temperature

Silicon carbide (SiC) is significantly superior to silicon for high power and high temperature applications. However, currently SiC devices are suffering from some imperfect material properties, such as low channel mobility which will result the low transconductance from the circuit design point of view. The possibility of a SiC analog integrated circuit is investigated by comparing analog circuit design parameters between the SiC and Si FET two-stage Op-Amps with temperature variation.