Analysis of EOS electric field modeling precision
Principles of electronic optical system (EOS) modeling using finite element method are presented. Modeling precision dependence on finite element mesh density is investigated. Modeling precision of electric field potential created by EOS is analyzed by calculating electron trajectories and scatterin...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Principles of electronic optical system (EOS) modeling using finite element method are presented. Modeling precision dependence on finite element mesh density is investigated. Modeling precision of electric field potential created by EOS is analyzed by calculating electron trajectories and scattering of their traces on the screen |
---|---|
ISSN: | 1330-1012 |
DOI: | 10.1109/ITI.2006.1708542 |