Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology

Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology

Using the virtual ground array structure of 2 bits/cell MirrorBittrade technology, a 90nm, 1.8V ORNANDtrade product combining the advantages of both NOR and NAND is presented. Full NAND functionality and performance compatibility is shown, while maintaining the NOR advantages

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Bibliographische Detailangaben
Hauptverfasser: Kuo, T.H., Yang, N., Leong, N., Wang, E., Lai, F., Lee, A., Chen, H., Chandra, S., Wu, Y., Akaogi, T., Melik-Martirosian, A., Pourkeramati, A., Thomas, J., VanBuskirk, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
Costs
Decoding
Delay
Flash memory
Maintenance
Multimedia communication
Random access memory
Read-write memory
Voltage
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Beschreibung
Zusammenfassung:Using the virtual ground array structure of 2 bits/cell MirrorBittrade technology, a 90nm, 1.8V ORNANDtrade product combining the advantages of both NOR and NAND is presented. Full NAND functionality and performance compatibility is shown, while maintaining the NOR advantages
ISSN:2158-5601
2158-5636
DOI:10.1109/VLSIC.2006.1705336