A Non-Volatile 2Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

A Non-Volatile 2Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

A 2Mbit CBRAM (conductive bridging random access memory) core has been developed utilizing a 90nm, VDD = 1.5V process technology. The presented design uses an 8F 2 (0.0648mum 2 ) 1T1CBJ (1-transistor/1-conductive bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a...

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Hauptverfasser: Honigschmid, H., Angerbauer, M., Dietrich, S., Dimitrova, M., Gogl, D., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., Bournat, S., Muller, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
1T1CBJ
Bridge circuits
CBRAM
Circuit simulation
Electrical resistance measurement
Electrodes
Feedback
Glass
Nonvolatile memory
Operational amplifiers
Random access memory
universal memory and program
Voltage control
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Beschreibung
Zusammenfassung:A 2Mbit CBRAM (conductive bridging random access memory) core has been developed utilizing a 90nm, VDD = 1.5V process technology. The presented design uses an 8F 2 (0.0648mum 2 ) 1T1CBJ (1-transistor/1-conductive bridging junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times les50ns are demonstrated
ISSN:2158-5601
2158-5636
DOI:10.1109/VLSIC.2006.1705334