Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions
For the first time, scaled PMOS MUGFET devices with TiCN/HfO 2 gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very...
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| creator | Lenoble, D. Anil, K. De Keersgieter, A. Eybens, P. Collaert, N. Rooyackers, R. Brus, S. Zimmerman, P. Goodwin, M. Vanhaeren, D. Vandervorst, W. Radovanov, S. Godet, L. Cardinaud, C. Biesemans, S. Skotnicki, T. Jurczak, M. |
| description | For the first time, scaled PMOS MUGFET devices with TiCN/HfO 2 gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 μA/μm @ I off 20nA/μm, at V ds = -1.2V) is achieved with extensions formed by optimized PLAD process |
| doi_str_mv | 10.1109/VLSIT.2006.1705270 |
| format | Conference Proceeding |
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Digest of Technical Papers</btitle><stitle>VLSIT</stitle><date>2006</date><risdate>2006</risdate><spage>168</spage><epage>169</epage><pages>168-169</pages><issn>0743-1562</issn><isbn>1424400058</isbn><isbn>9781424400058</isbn><abstract>For the first time, scaled PMOS MUGFET devices with TiCN/HfO 2 gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 μA/μm @ I off 20nA/μm, at V ds = -1.2V) is achieved with extensions formed by optimized PLAD process</abstract><pub>IEEE</pub><doi>10.1109/VLSIT.2006.1705270</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0743-1562 |
| ispartof | 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.168-169 |
| issn | 0743-1562 |
| language | eng |
| recordid | cdi_ieee_primary_1705270 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Cathodes Doping Hafnium oxide Implants Ion beams Plasma density Plasma devices Plasma immersion ion implantation Plasma sources |
| title | Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions |
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