Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

For the first time, scaled PMOS MUGFET devices with TiCN/HfO 2 gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very...

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Hauptverfasser: Lenoble, D., Anil, K., De Keersgieter, A., Eybens, P., Collaert, N., Rooyackers, R., Brus, S., Zimmerman, P., Goodwin, M., Vanhaeren, D., Vandervorst, W., Radovanov, S., Godet, L., Cardinaud, C., Biesemans, S., Skotnicki, T., Jurczak, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Cathodes
Doping
Hafnium oxide
Implants
Ion beams
Plasma density
Plasma devices
Plasma immersion ion implantation
Plasma sources
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Zusammenfassung:For the first time, scaled PMOS MUGFET devices with TiCN/HfO 2 gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 μA/μm @ I off 20nA/μm, at V ds = -1.2V) is achieved with extensions formed by optimized PLAD process
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705270