18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface

18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface

The promising potential of (110) SiGe channel as next generation high performance p-MOSFETs is well demonstrated in this work. As high as 48% of drive current enhancement on SiGe channel p-MOSFETs fabricated on (110) surface have been achieved for the first time. In addition, combining with compress...

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Hauptverfasser: Liu, P.W., Pan, J., Chang, T., Tsai, T.L., Chen, T., Liu, Y.C., Tsai, C.H., Lan, B., Lin, Y., Chiang, W., Tsai, C.T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitive sensors
Cities and towns
Compressive stress
Electronic mail
Germanium silicon alloys
Microelectronics
MOSFET circuits
Piezoresistance
Research and development
Silicon germanium
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Zusammenfassung:The promising potential of (110) SiGe channel as next generation high performance p-MOSFETs is well demonstrated in this work. As high as 48% of drive current enhancement on SiGe channel p-MOSFETs fabricated on (110) surface have been achieved for the first time. In addition, combining with compressive stress capping layer, the (110) SiGe channel p-MOSFETs exhibits an extended 81% Idsat gain with Idsat of 850μA/μm at 100nA/μm Ioff. The 32% larger longitudinal piezoresistance coefficient compared to Si extracted from SiGe channel p-MOSFET reveals the advantage of applying strain in SiGe channel. The 3.3 X hole mobility enhancement of (110) SiGe over (100) Si illustrates the advantage of this device architecture
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705260