25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack

25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack

We investigate for the first time the experimental performance of strained silicon directly on insulator (sSOI) for short and narrow FDSOI NMOS transistors integrated with a TiN/HfO 2 gate stack. A +16% drive current improvement is reported for a 25nm gate length (among the best ever reported for sh...

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Hauptverfasser: Deleonibus, S., Mazure, C., Gaud, P., Grampeix, H., Colonna, J.P., Previtali, B., Dansas, H., Lafond, D., Jahan, C., Fenouillet-Beranger, C., Ernst, T., Denorme, S., Vandooren, A., Cluzel, J., Barbe, J.C., Allain, F., Brevard, L., Cayrefoureq, I., Ghyselen, B., Casse, M., Rouchouze, E., Buj, C., Tosti, L., Faynot, O., Rochette, F., Dupre, C., Andrieu, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitive sensors
Contacts
Epitaxial growth
Etching
Hafnium oxide
Insulation
MOSFET circuits
Silicon
Substrates
Tin
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Zusammenfassung:We investigate for the first time the experimental performance of strained silicon directly on insulator (sSOI) for short and narrow FDSOI NMOS transistors integrated with a TiN/HfO 2 gate stack. A +16% drive current improvement is reported for a 25nm gate length (among the best ever reported for short substrate-induced strained devices). Through in-depth electrical characterization and mechanical simulations, transition from bi-axial to uni-axial strain is evidenced in extremely narrow sSOI channels, with a 40% mobility enhancement for 35nm wide devices. This highlights that the strain is not lost at sub-40nm dimensions
ISSN:0743-1562
DOI:10.1109/VLSIT.2006.1705253